Aspects of GaAs Selective Area Growth by Molecular Beam Epitaxy with Patterning by SiO2 Masking
- 1 October 1983
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 130 (10) , 2072-2075
- https://doi.org/10.1149/1.2119525