Saturation velocity determination for In0.53Ga0.47As field-effect transistors
- 15 May 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10) , 817-819
- https://doi.org/10.1063/1.92143
Abstract
The fabrication of Schottky-gate field-effect transistors (FET’s) on InGaAs lattice matched to InP is reported. A higher band-gap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given, which shows over a factor of 2 higher saturated velocity for InGaAs in comparison to GaAs when used as a FET material.Keywords
This publication has 2 references indexed in Scilit:
- Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxyElectronics Letters, 1979
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977