Epitaxial growth of GaN on Si (100)/sapphire (0001) using RF plasma-assisted ionized source beam epitaxy
- 1 May 1995
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 27 (5) , 427-434
- https://doi.org/10.1007/bf00563579
Abstract
No abstract availableKeywords
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