Transport Properties of Sputtered Vanadium Dioxide Thin Films

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Abstract
Change‐transport phenomena in thin films of vanadium dioxide have been investigated. This paper presents conductivity, Hall coefficient, and thermoelectric power data for reactively sputtered vanadium dioxide thin films both above and below the metal‐semiconductor transition. Measurements were made both on single‐crystal films and highly oriented polycrystalline films. For temperatures below the transition, the data are interpreted in terms of a two‐band model of a semiconductor having a conduction band and an impurity band in which conduction takes place among interacting impurity levels.