Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect
- 10 July 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 19 (2) , 71-72
- https://doi.org/10.1103/physrevlett.19.71
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.19.71Keywords
This publication has 6 references indexed in Scilit:
- Precise Determination of the Multiphonon and Photon Carrier Generation Properties using the Impurity Photovoltaic Effect in SemiconductorsPhysical Review Letters, 1967
- The equivalent circuit model in solid-state electronics—Part I: The single energy level defect centersProceedings of the IEEE, 1967
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Recombination in SemiconductorsProceedings of the IRE, 1958