Origin of oriented crystal growth of radiantly melted silicon on SiO2
- 1 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5) , 546-548
- https://doi.org/10.1063/1.95317
Abstract
We demonstrate directly that {100} texturing of lamellae in radiantly melted silicon on SiO2 derives from precursor seeds in the as‐deposited solid film. The anisotropic interfacial free energy between crystalline silicon and SiO2 controls the orientation.Keywords
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