On the Transient Analysis of Circuits Containing Multiple Diodes
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 31 (9) , 781-783
- https://doi.org/10.1109/tmtt.1983.1131593
Abstract
Multiple-diode circuits are increasingly being used for power combining at microwave frequencies. This paper presents a method for the transient analysis of such circuits. The method exploits the cold-capacitance-particle-current decomposition of semiconductor diodes and is simpler, more efficient, and more accurate than previously proposed approaches to the problem.Keywords
This publication has 5 references indexed in Scilit:
- Transient analysis of two semiconductor devices under circuit-loaded operation conditionsIEEE Transactions on Electron Devices, 1982
- Self-Consistent Solutions for IMPATT Diode NetworksIEEE Transactions on Microwave Theory and Techniques, 1981
- Theoretical Investigations of TRAPATT Amplifier OperationIEEE Transactions on Microwave Theory and Techniques, 1980
- Large-signal time-domain modeling of avalanche diodesIEEE Transactions on Electron Devices, 1979
- Characterization of avalanche diode TRAPATT oscillatorsIEEE Transactions on Electron Devices, 1970