A selective etchant for Hg1−xCdxTe, CdTe and HgTe on GaAs
- 1 July 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 37 (3) , 291-298
- https://doi.org/10.1016/0169-4332(89)90491-1
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Growth and properties of Hg1-xCdxTe on GaAs, with x − 0.27Journal of Electronic Materials, 1988
- Light emission from HgCdTe diodesJournal of Vacuum Science & Technology A, 1988
- Observation of negative differential resistance from a single barrier heterostructureApplied Physics Letters, 1988
- Infrared Detector Materials Research - A ViewpointPublished by SPIE-Intl Soc Optical Eng ,1986
- High band gap HgCdTe optical waveguides designed for 10.6 µmPublished by SPIE-Intl Soc Optical Eng ,1986
- CMT: The material for fiber optical communication devicesJournal of Crystal Growth, 1985
- Composition of native oxides and etched surfaces on Hg1−xCdxTeJournal of Vacuum Science and Technology, 1982
- Electrolyte electroreflectance study of the effects of anodization and of chemomechanical polish on Hg1−xCdxTeJournal of Vacuum Science and Technology, 1982
- XPS investigation of the oxidation of Hg1−xCdxTe surfacesJournal of Vacuum Science and Technology, 1981
- Sputter cleaning and dry oxidation of CdTe, HgTe, and Hg0.8Cd0.2Te surfacesSurface Science, 1980