Metal–germanium–metal ultrafast infrared detectors
- 15 December 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (12) , 7599-7605
- https://doi.org/10.1063/1.1519958
Abstract
We demonstrate silicon-based ultrafast metal–semiconductor–metal (MSM) photodetectors for near infrared optocommunication wavelengths. They show a response time of 12.5 ps full width at half maximum (FWHM) at both 1300 and 1550 nm wavelengths. The overall external quantum efficiencies are 13% at 1320 nm and 7.5% at 1550 nm. The sensitive volumes are 270 nm thick Ge films, grown on Si(111) by molecular beam epitaxy. Interdigitated Cr metal top electrodes with 1.5–5 μm spacing and identical finger width form Schottky contacts to the Ge film. A Ti-sapphire femtosecond laser with an optical parametric oscillator and an electro-optic sampling system are used to evaluate the temporal response, which is limited by the transit time of the carriers between electrodes. In addition, results on Si–Ge MSM heterostructure detectors with plate capacitor geometry are presented. At 1550 nm an ultrafast response of 9.4 ps FWHM and an overall quantum efficiency of 0.9% are measured.This publication has 13 references indexed in Scilit:
- Efficient high-speed near-infrared Ge photodetectors integrated on Si substratesApplied Physics Letters, 2000
- Ultrafast silicon based photodetectorsJournal of Vacuum Science & Technology A, 2000
- Metal–Ge-Si heterostructures for near-infrared light detectionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Fabrication of ultrafast Si based MSM photodetectorElectronics Letters, 1998
- Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on SiApplied Physics Letters, 1997
- Surfactants in Si(111) homoepitaxyApplied Physics Letters, 1995
- 32 GHz metal-semiconductor-metal photodetectors on crystalline siliconApplied Physics Letters, 1992
- Defect self-annihilation in surfactant-mediated epitaxial growthPhysical Review Letters, 1991
- Picosecond pulse response characteristics of GaAs metal-semiconductor-metal photodetectorsJournal of Applied Physics, 1991
- Low-temperature growth of Ge on Si(100)Applied Physics Letters, 1991