Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S)
- https://doi.org/10.1143/jjap.37.1440
Abstract
We report on the growth of high quality cubic GaN films on GaAs (100) substrates by low pressure metalorganic vapor phase epitaxy. The GaN films exhibit a smooth surface which is free from cracks. X-ray diffraction shows the cubic nature of the GaN films. X-ray rocking curve with ω scan shows that the crystal quality of GaN films improves markedly with increasing growth temperatures. Photoluminescence measurements confirm the high quality of the cubic GaN films. The full width at half maximum of excitonic emission from the cubic GaN films is as narrow as 70 meV at 300 K.Keywords
This publication has 23 references indexed in Scilit:
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- The near band edge photoluminescence of cubic GaN epilayersApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxyPhysical Review B, 1995
- Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen sourceJournal of Crystal Growth, 1994
- Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen SourceJapanese Journal of Applied Physics, 1994
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface PretreatmentsJapanese Journal of Applied Physics, 1991
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976