Schottky-like behavior of the GaP(110)/Ag interface

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Abstract
We have performed a photoemission study of the Schottky barrier obtained by depositing Ag onto UHV cleaved GaP(110) at room temperature. The barrier appears to be fully developed at a coverage of ∼2 monolayers and its height is 1.1 eV. This figure is to be compared with higher (lower) values obtained with metals having a larger (smaller) work function than Ag, for example Cu and Au (In and Al) deposited onto the same surface. The result corroborates the idea that the metal–GaP(110) interface is a good example of the Schottky limit in metal–semiconductor junctions. The effective work function model proposed by Woodall and Freeouf provides the best interpretation of the Schottky barrier height in this interface.

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