Lattice-matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors
- 22 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (4) , 382-384
- https://doi.org/10.1063/1.102792
Abstract
Successful growth of lattice‐matched Sc1−xErxAs layers buried in GaAs with a room‐temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice‐matched rare‐earth monopnictides and monochalcogenides in semiconductors. Reflection high‐energy electron diffraction oscillations during ScAs, ErAs, and Sc1−xErxAs growth indicate monolayer‐by‐monolayer growth.Keywords
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