NOISE IN DOUBLE-INJECTION SPACE-CHARGE-LIMITED DIODES
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (11) , 308-309
- https://doi.org/10.1063/1.1754823
Abstract
It is shown that the h.f. conductance g of a double‐injection Ge diode shows transit time effects and that the limiting noise can be represented by a current generator (4kTgΔf)1/2 in parallel to the device. In contrast, the single‐injection diode seems to be best represented by a current generator (8kTgΔf)1/2.Keywords
This publication has 6 references indexed in Scilit:
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- Noise in space-charge-limited solid-state devicesSolid-State Electronics, 1967
- NOISE SUPPRESSION IN A DOUBLE-INJECTION SILICON DIODEApplied Physics Letters, 1966
- Transit time effects in the space-charge-limited silicon microwave diodeSolid-State Electronics, 1966
- High-frequency admittance of space-charge-limited solid-state diodesProceedings of the IEEE, 1966
- Characteristics of the space-charge-limited dielectric diode at very high frequenciesSolid-State Electronics, 1961