GaInAs PIN photodiodes grown on silicon substrates for 1.55 μm detection

24 September 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (20) , 1094-1095
https://doi.org/10.1049/el:19870764

Abstract

We report the first GalnAs PIN photodiodes to be fabricated on silicon substrates. Superlattice buffer layers were used to accommodate the lattice parameter mismatch. Reverse leakage currents of ̃70nA at – 1 V bias were measured for 105μm-diameter mesa diodes. The uncoated external quantum efficiency at a wavelength of 1.55μmwas 30%.

Keywords

OPTICAL FIBRE COMMUNICATION
LATTICE PARAMETER MISMATCH
30 PERCENT
1.55 MICRON
III-V SEMICONDUCTORS
MESA DIODES
UNCOATED EXTERNAL QUANTUM EFFICIENCY
MOCVD
GAINAS-SI
105 MICRON
MICRON WAVELENGTH DETECTORS
PIN PHOTODIODES
SUPERLATTICE BUFFER LAYERS
P-I-N DEVICE