RF-sputtered ferroelectric barium titanate films on silicon
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 27 (1) , 161-164
- https://doi.org/10.1080/00150198008226090
Abstract
Polycrystalline films of BaTi03 with ferroelectric properties are regularly observed for films thicker than 1000 Å which have been rf-sputtered deposited at 5 Å/min onto silicon substrates at temperatures above 500°C. A 2000 Å thick film deposited under these conditions typically exhibits a counter-clockwise hysteresis curve, a leakage current below 10−5 C/cm2, a remanent polarization persisting for two days, and a dielectric constant vs. temperature relationship which peaks at 135°C. The nature of the BaTi03 - silicon system has been extensively characterized by supporting studies.Keywords
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