Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs

• 1 December 1991
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 38  (12) , 2708-2709
• https://doi.org/10.1109/16.158735

Abstract

Keywords

• HIGHLY STRAINED
• STOP ETCH LAYER
• CUTOFF FREQUENCY
• GATE RECESS
• CHANNEL MODFETS
• STRAINED GA0.23IN0.77
• MODFETS FORM