Technique for measurement of the gain spectra of semiconductor diode lasers
- 1 December 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (11) , 3096-3099
- https://doi.org/10.1063/1.333867
Abstract
A simple technique for determining the gain spectra of semiconductor lasers from measurements of the emission spectra of the laser is presented. The technique is insensitive to the response function of the device used to determine the emission spectra of the laser. Accurate estimates of the gain can be obtained from data which have been convolved with an instrument response function of ≲0.5 Å FWHM for a cavity free spectral range of 2.5 Å. Two applications of the gain data obtained by the technique are presented.This publication has 7 references indexed in Scilit:
- Consequences of a lower level population on the modeling of a homogeneously broadened injection laserApplied Physics Letters, 1984
- Comparison of rate-equation and Fabry-Perot approaches to modeling a diode laserApplied Optics, 1983
- Threshold variations in diode lasers induced by external resonator feedbackIEEE Journal of Quantum Electronics, 1983
- Gain and carrier lifetime measurements in AlGaAs single quantum well lasersIEEE Journal of Quantum Electronics, 1983
- Gain measurements on semiconductor lasers by optical feedback from an external grating cavityIEEE Journal of Quantum Electronics, 1983
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Optical Maser Oscillators and NoiseBell System Technical Journal, 1964