Electronic passivation of GaP surfaces using (NH4)2S treatment

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Abstract
The influence of (NH4)2S treatment on the surface properties of GaP is presented for the first time. Changes in the chemical composition and Fermi level position are characterized using X-ray photoelectron spectroscopy. These measurements show that after surface treatment, the GaP surface is free of native oxides. A strong enhancement (~ 50 times) in the cathodoluminescent efficiency was observed for sulfur passivated samples. Schottky diode characteristics were used to reveal changes in the barrier height and interface state density due to surface treatment. Changes in carrier concentration were also found to be reflected in measured Raman spectra. The passivation mechanism is also briefly discussed.

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