Hole current impedance and electron current enhancement by back-contact barriers in CdTe thin film solar cells

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Abstract
The combined effects of a significant back-contact barrier and a low absorber carrier density frequently alter the current-voltage ( J - V ) characteristics of CdTesolar cells. This combination leads to two competing mechanisms that can alter the J - V characteristics in two different ways. One is a majority-carrier (hole) limitation on current in forward bias that reduces the fill factor and efficiency of the solar cell. The second is a high minority-carrier (electron) contribution to the forward diode current that results in a reduced open-circuit voltage.CdTesolar cells are particularly prone to the latter, since the combination of a wide depletion region and impedance of light-generated holes at the back contact increases the electron injection at the front diode. The overlap of front and back space-charge regions will generally enhance the electron current, but is not a requirement for substantially increased forward current. The simulated J - V curves, illustrating the two major effects, are in good agreement with the experimental curves that have been observed in recent years.