Energy levels of A and B excitons in wurtzite-type semiconductors with account of electron–hole exchange interaction effects
- 1 February 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 91 (2) , 467-478
- https://doi.org/10.1002/pssb.2220910212
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Binding energies and wave functions of wannier excitons in uniaxial crystals — a modified perturbation approach. I. theoryPhysica Status Solidi (b), 1975
- Energy Levels of Indirect Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Anisotropy of excitons in semiconductorsIl Nuovo Cimento B (1971-1996), 1970
- Intrinsic Absorption "Edge" in II-VI Semiconducting Compounds with the Wurtzite StructurePhysical Review B, 1967
- Excitons in Alkali HalidesJournal of the Physics Society Japan, 1967
- Exciton Structure and Zeeman Effects in Cadmium SelenidePhysical Review B, 1962
- Symmetry of Excitons inOPhysical Review B, 1961
- Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium SulfidePhysical Review B, 1961
- Effective mass approximation for excitonsJournal of Physics and Chemistry of Solids, 1956