Effect of generated defects during plastic deformation on electron properties of silicon
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (2) , 225-230
- https://doi.org/10.1002/crat.19810160217
Abstract
Conductivity, photoconductivity and SDP of n‐type silicon deformed and annealed under different thermal conditions were investigated. The conductivity was found to be dependent on the temperature of deformation and additional annealing. Recombination in deformed samples is fully controlled by paramagnetic centers localized within the charge space region around the dislocations.Keywords
This publication has 5 references indexed in Scilit:
- Spin-dependent recombination at dislocations in heat treated siliconPhysica Status Solidi (b), 1979
- Recombination at dislocationsSolid-State Electronics, 1978
- Spin‐dependent recombination at exchange‐coupled dislocation centres in siliconPhysica Status Solidi (b), 1977
- Spin‐Dependent Recombination at Dislocations in SiliconPhysica Status Solidi (b), 1975
- The annealing of the EPR-signal produced in silicon by plastic deformationJournal of Physics and Chemistry of Solids, 1970