Surface band bending on clean and oxidized (110)-GaAs studied by Raman spectroscopy
- 31 December 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (10) , 857-860
- https://doi.org/10.1016/0038-1098(80)90128-3
Abstract
No abstract availableKeywords
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- Work function variations of gallium arsenide cleaved single crystalsSurface Science, 1975