Large-signal modeling of GaAs MESFET operation

1 December 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (12) , 1817-1824
https://doi.org/10.1109/T-ED.1983.21451

Abstract

A numerical modeling technique is described which allows the accurate large-signal characterization of highly doped (>1023m-3) GaAs MESFET's. A rigourous two-dimensional numerical analysis is used to extract the FET terminal currents. Specially formulated finite difference equations are used to produce stable, accurate, and efficient solutions. By embedding the device in a simple circuit model, a two, terminal time domain response is obtained which is Fourier analyzed to produce a "device surface". The technique is applied to the analysis and design of aKu-band monolithic microwave Oscillator, using a 0.5-µm gate length MESFET. A simple equivalent circuit model is proposed which predicts an output of 4 dBm at 16.2 GHz for this oscillator.

Keywords

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