Theory of Electron–Hole Liquid in Doped Semiconductors. Application to GaP
- 1 July 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 118 (1) , 303-317
- https://doi.org/10.1002/pssb.2221180136
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The Electron-Hole Liquid in Semiconductors: Experimental AspectsPublished by Elsevier ,1978
- The Electron-Hole Liquid in Semiconductors: Theoretical AspectsPublished by Elsevier ,1978
- Erratum: Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1977
- Impurity effects in electron hole dropletsSolid State Communications, 1976
- Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1976
- Properties of the electron-hole drop in-doped germanium and siliconPhysical Review B, 1975
- Theory of disordered systems. IV. Coulomb interaction and screeningPhysica Status Solidi (b), 1975