Scattering Anisotropy of Conduction Electrons Due to Vacancies in High-Purity Monocrystalline Aluminium
- 15 November 1988
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 57 (11) , 3896-3902
- https://doi.org/10.1143/jpsj.57.3896
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Low Temperature Dependence of Positron Annihilation in Quenched AluminumJournal of the Physics Society Japan, 1985
- Annealing Kinetics of Vacancies in Aluminum Single Crystals with Low Dislocation DensityJournal of the Physics Society Japan, 1980
- Study on the Trace Elements in Zone-Refined AluminumTransactions of the Japan Institute of Metals, 1977
- Influence of Fermi surface and defect structure on the lowfield galvanomagnetic properties of AlJournal of Physics F: Metal Physics, 1976
- Low-field magnetoresistance in metalsPhysical Review B, 1976
- Zone Refining of AluminumTransactions of the Japan Institute of Metals, 1976
- Deviations form Matthiessen's Rule in Dilute Aluminum AlloysJournal of the Physics Society Japan, 1975
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972
- A sensitive superconducting “chopper” amplifierPhysica, 1957
- A superconducting modulatorJournal of Scientific Instruments, 1955