Pulsed electron beam irradiation of ion-implanted copper single crystals
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7) , 564-566
- https://doi.org/10.1063/1.91547
Abstract
The effect of an intense, pulsed electron beam on high‐dose implanted Cu single crystals has been studied. Rutherford backscattering and channeling have been used to obtain the depth concentration profiles and lattice locations of the implanted species (Au, Ag, and Ta) before and after pulsed electron beam irradiation. Channeling and secondary electron microscopy measurements show that the Cu surface melts during pulsed irradiation followed by an epitaxial lattice growth resulting in (i) a redistribution of the implanted species, (ii) some species (e.g., Au and Ag) remaining on lattice sites, and (iii) Ta leaving substitutional sites.Keywords
This publication has 3 references indexed in Scilit:
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- Electron microscope examination of the surface topography of ion-bombarded copperJournal of Materials Science, 1968
- Continuous Series of Metastable Solid Solutions in Silver-Copper AlloysJournal of Applied Physics, 1960