Charge state and hydrogen levels position in different III–V materials
- 23 October 1989
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 141 (1-2) , 75-77
- https://doi.org/10.1016/0375-9601(89)90449-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Shallow impurity neutralization in GaP by atomic hydrogenApplied Physics Letters, 1989
- Dopant-type effects on the diffusion of deuterium in GaAsPhysical Review B, 1987
- Effect of hydrogen on shallow dopants in crystalline siliconApplied Physics Letters, 1987
- Hydrogen in crystalline silicon: A deep donor?Applied Physics Letters, 1987
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- A universal trend in the binding energies of deep impurities in semiconductorsApplied Physics Letters, 1984
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982