Temperature dependence of the resistivity and the Hall coefficient of thin bismuth film
- 1 June 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6) , 2359-2363
- https://doi.org/10.1063/1.323022
Abstract
Temperature dependence measurements of Hall coefficients and resistivity were carried out on thin bismuth films (∼1500 Å thickness) of various heat‐treating histories. The results show that the perfectness of the thin‐film crystal correlates with the temperature dependence of resistivities and that of Hall coefficients if the evaporation condition, film thickness, and the substrate material of thin films are identical. Also it shows that the perfectness of the thin‐film crystal depends on the history of heat treatment as well as the surface condition of the substrate.This publication has 5 references indexed in Scilit:
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- Electrical Transport Properties of Thin Bismuth FilmsPhysical Review B, 1971
- Small-Field Galvanomagnetic Tensor of Bismuth at 4.2°KPhysical Review B, 1962
- The mean free path of electrons in metalsAdvances in Physics, 1952