In situ mass spectroscopy and thermogravimetric studies of GaAs MOCVD gas phase and surface reactions
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (1-2) , 165-174
- https://doi.org/10.1016/0022-0248(87)90218-1
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materialsChemical Engineering Science, 1987
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- Pyrolysis studies of main group metal‐alkyl bond dissociation energies: VLPP of GeMe4, SbEt3, PbEt4, and PEt3International Journal of Chemical Kinetics, 1983
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs 1 - y Sb y and Ga 1 - x In x AsElectronics Letters, 1980
- Transport Phenomena Measurements in Epitaxial ReactorsJournal of the Electrochemical Society, 1978
- An investigation of the chemical structure of perchloric acid flames, Part I—The molecular beam sampling apparatusCombustion and Flame, 1973
- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963