In segregation at the growth front of the GaAs/In0.30Ga0.70As (100) heterojunction

Abstract
The strained layer In0.30Ga0.70As/GaAs (100) multiple quantum well system has attracted considerable interest as an amplifier for Er-doped optical fibers at a wavelength of 0.98 μm. In situ ultraviolet photoemission spectroscopy and reflection high energy electron diffraction have been used to study the growth front profile and pseudomorphism of single GaAs/In0.30Ga0.70As heterojunctions. These interfaces were grown by solid source molecular beam epitaxy at different substrate temperatures under As2 overpressure using interrupted and continuous growth mode techniques. The In concentration in the overlayer increases exponentially with temperature in a manner analogous to that of the diffusion constant for equilibrium growth conditions.

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