Water Vapor as an Oxidant in BBr3 Open-tube Silicon Diffusion Systems
- 1 January 1974
- journal article
- Published by IBM in IBM Journal of Research and Development
- Vol. 18 (1) , 40-46
- https://doi.org/10.1147/rd.181.0040
Abstract
The use of water vapor as an oxidant in place of oxygen enables a wide range of surface concentrations to be obtained in a single-step process. The concentration of boron at the silicon surface is found not to be constant throughout the diffusion process because, at the temperature used, the oxide growth is not parabolic.Keywords
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