Effects of AlN on the secondary recrystallization behavior of 3% Si-Fe (110) [001] single crystals

Abstract
Cold rolled (110) [001] single crystals of 3% Si‐Fe containing AlN controlled adequately in size, distribution and quantity develop the original (110) [001] or cube‐on‐edge orientation by seconary recrystallization after an anneal at 550°C for 40h followed by an anneal at 1200°C. During the course of secondary recrystallization, (110) [001] primaries grow at the expense of {111} 〈110〉 and {120} 〈001〉 main primaries.

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