A Two Layer Photoresist Process In A Production Environment

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Abstract
A manufacturable, high resolution photoresist process is described. This process was developed to increase production margins on the 1.0 μm geometries used in the Hewlett Packard NMOS III process: This was accomplished through a modification of the portable conformal mask (PCM) technique,2 which drastically reduced substrate effects on GCA. wafer stepper performance by the introduction of a bleachable dye in the bottom photoresist layer.

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