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Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators
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Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators
Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators
JF
J.C.C. Fan
J.C.C. Fan
MG
M.W. Geis
M.W. Geis
BT
B.-Y. Tsaur
B.-Y. Tsaur
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1 January 1980
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
845
https://doi.org/10.1109/iedm.1980.189977
Abstract
No abstract available
Keywords
EPITAXIAL GROWTH
SEMICONDUCTOR FILMS
INSULATION
SUBSTRATES
LABORATORIES
AMORPHOUS MATERIALS
STRIPS
GOVERNMENT
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Cited by 1 article
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