Investigation of Se-doped GaAs epilayers grown by low-pressure metal-organic chemical vapor deposition
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 47 (1) , 105-108
- https://doi.org/10.1016/0022-3697(86)90184-8
Abstract
No abstract availableKeywords
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