Low threshold 1.3-μm InGaAsP/InP lasers prepared by a single-step liquid-phase epitaxy
- 15 March 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (6) , 2151-2153
- https://doi.org/10.1063/1.341177
Abstract
A novel approach to form low threshold laser structures, similar to existing mass-transported lasers but without the second regrowth step, is described. The laser has comparable performance in threshold current and quantum efficiency to more conventional buried heterostructure lasers made with a two-step process. Because of the simplicity in fabrication and its reduced parasitic capacitance it has the potential to be low cost and to have high modulation bandwidth.This publication has 14 references indexed in Scilit:
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