A comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs:C single- and double-heterojunction bipolar transistors grown by LP-MOCVD
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2656-2657
- https://doi.org/10.1109/16.163517
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Calculated electron and hole steady-state drift velocities in lattice matched GaInP and AlGaInPJournal of Applied Physics, 1992