Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures

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Abstract
A new self-limited growth technique based on control of surface migration in flow rate modulation epitaxial growth on nonplanar substrates is proposed. The proposed self-limited growth is experimentally confirmed by growing AlGaAs/GaAs quantum wires on V-grooved substrates. Using this new self-limited growth technique, atomically uniform semiconductor quantum nanostructures are expected to be fabricated easily.