Zeeman splitting of shallow donors in GaN
- 11 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (2) , 248-250
- https://doi.org/10.1063/1.123270
Abstract
The Zeeman splitting of the donor spectra in cubic and hexagonal GaN is studied using an effective mass theory approach. Soft-core pseudopotentials were used to describe the chemical shift of the different substitutional dopants. The donor ground states calculated range from 29.5 to 33.7 meV, with typically 1 meV higher binding in the hexagonal phase. Carbon is found to produce the largest donor binding energy. The ionization levels and excited states are in excellent agreement with Hall and optical measurements, and suggest the presence of residual C in recent experiments.Keywords
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This publication has 24 references indexed in Scilit:
- Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 1998
- Acceptor binding energies in GaN and AlNPhysical Review B, 1998
- Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrateApplied Physics Letters, 1998
- Zeeman spectroscopy of shallow donors in GaNPhysical Review B, 1997
- Effective masses and valence-band splittings in GaN and AlNPhysical Review B, 1997
- Pressure Induced Deep Gap State of Oxygen in GaNPhysical Review Letters, 1997
- Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonanceJournal of Applied Physics, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Ab initiolinear combination of pseudo-atomic-orbital scheme for the electronic properties of semiconductors: Results for ten materialsPhysical Review B, 1987
- Perturbation Theory for a Bound PolaronPhysical Review B, 1971