Temperature dependence of current flows in nondegenerate MIS tunnel diodes
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (12) , 5179-5184
- https://doi.org/10.1063/1.322195
Abstract
Current flows in the nondegenerate metal‐insulator‐semiconductor (MIS) tunnel diode are temperature sensitive. This temperature sensitivity can be an aid in interpreting the properties of these devices. It allows information regarding the energy distribution of particles tunneling between the metal and the semiconductor to be obtained as well as providing another technique for estimating metal‐semiconductor barrier height. Experimental support is given for the existence of minority‐ and majority‐carrier diodes as well as for devices where the current flow is dominated by tunneling between the metal and surface‐state levels.This publication has 18 references indexed in Scilit:
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