Invited: Deep Levels in GaAs and GaP
- 1 January 1977
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 16 (S1) , 223
- https://doi.org/10.7567/jjaps.16s1.223
Abstract
Recent understanding about deep levels in GaAs and GaP is surveyed. Emphasis is placed on some topics of current interest on non-radiative centers, namely, MPE capture theory, junction capacitance techniques, dependence of emission rate and capture probability on temperature. Particular attention is given to the theoretical approach to deep levels in the apparent absence of a review paper on this problem.Keywords
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