An InAs-Based Intersubband Quantum Cascade Laser

Abstract
Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 µm has been observed at 4 K with a threshold current density of 5.2 kA/cm2.

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