Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering
- 4 October 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (14) , 1909-1911
- https://doi.org/10.1063/1.110645
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Room-temperature determination of two-dimensional electron gas concentration and mobility in heterostructuresApplied Physics Letters, 1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Raman scattering study of the electron-phonon coupling in GaInAs-InP quantum wellsSemiconductor Science and Technology, 1990
- Raman spectra of AlxIn1−xAs grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Raman scattering by GaInAs-InP quantum wells: effects of free carriers and impuritiesSemiconductor Science and Technology, 1987
- Electron-phonon interactions in indium gallium arsenideSemiconductor Science and Technology, 1987
- Resonant Raman scattering at the saddle-point singularity inAsPhysical Review B, 1985
- Light scattering by two-dimensional electron systems in semiconductorsSurface Science, 1982