Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4526-4530
- https://doi.org/10.1063/1.341280
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- TEM and SEM Studies of MOCVD-Grown GaP on SiMRS Proceedings, 1985
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Crystal Interfaces. Part I. Semi-Infinite CrystalsJournal of Applied Physics, 1963
- Direct observation of dislocations due to epitaxyPhilosophical Magazine, 1961
- The observation of dislocations to accommodate the misfit between crystals with different lattice parametersPhilosophical Magazine, 1961
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949