Pb1−xEuxS films prepared by hot wall epitaxy
- 25 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4) , 274-275
- https://doi.org/10.1063/1.100592
Abstract
Pb1−x EuxS films were prepared for the first time using hot wall epitaxy technique. X‐ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).Keywords
This publication has 7 references indexed in Scilit:
- Properties of Pb1−xEuxTe films prepared by hot-wall epitaxyJournal of Applied Physics, 1988
- Lead salt quantum well diode lasersSuperlattices and Microstructures, 1985
- Wavelength coverage of lead-europium-selenide-telluride diode lasersApplied Physics Letters, 1984
- Recent advances in lead-chalcogenide diode lasersApplied Physics A, 1979
- An electronic structure study of europium chalcogenides by soft x-ray spectroscopySolid State Communications, 1975
- Narrow Gap SemiconductorsPublished by Elsevier ,1974
- Preparation and properties of Pb-xCdxSJournal of Electronic Materials, 1972