Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si

1 March 1975

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 26 (5) , 221-222
https://doi.org/10.1063/1.88128

Abstract

It has been observed by C−V measurements that randomly implanted ¹⁰B has shallower profiles in Si than ¹¹B for the acceleration energy range from 50 to 200 keV. This effect can be explained only in terms of electronic stopping in LSS’s theory.

Keywords

ION IMPLANTATION

This publication has 2 references indexed in Scilit:

Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reaction
Applied Physics Letters, 1972
A technique for directly plotting the inverse doping profile of semiconductor wafers
IEEE Transactions on Electron Devices, 1969