The damage-dependent atom and carrier profiles in phosphorus-implanted silicon
- 1 November 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 109 (1) , 11-17
- https://doi.org/10.1016/0040-6090(83)90026-3
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977