State holding circuit using heterojunction bipolartransistors and resonant tunnelling diodes
- 6 January 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (1) , 90-92
- https://doi.org/10.1049/el:19940008
Abstract
A state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and the potential for use in high speed circuits.Keywords
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