Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S) , 1214-1216
- https://doi.org/10.1143/jjap.35.1214
Abstract
We propose a lateral confinement enhanced rectangular AlGaAs/AlAs quantum wire (QWR) structure grown in situ, which utilizes the Ga-rich AlGaAs spontaneous vertical quantum wells formed during the growth of the AlGaAs epilayer in the V-grooves. AlGaAs/AlAs QWR structures have been grown on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE), and been investigated by transmission electron microscopy, photoluminescence and cathodoluminescence measurements.Keywords
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