Magnetic field and surface influences on double injection phenomena in semiconductors. I. The magnetodiode effect theory for the semiconductor and insulator regimes
- 16 April 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (2) , 683-695
- https://doi.org/10.1002/pssa.2210640234
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Non uniform recombination in thin silicon-on-sapphire filmsSolid-State Electronics, 1978
- Transverse diffusion currents as an important source of error in magnetoresistance measurementsJournal of Physics C: Solid State Physics, 1978
- An ESFI sos magnetodiodePhysica Status Solidi (a), 1977
- Influence of surfaces on the ettingshausen effect application to the characterization of narrow-gap semiconductorsPhysica Status Solidi (a), 1977
- Negative magnetoresistance in asymmetric p+–i–n+ structuresPhysica Status Solidi (a), 1974
- L'effet magnetovoltaïque de surfaceSolid-State Electronics, 1972
- Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode EffectPhysica Status Solidi (b), 1968
- Theory of Double Injection into a Semiconductor of Finite Cross-SectionJournal of the Physics Society Japan, 1963
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Zur Theorie der magnetischen Sperrschicht in HalbleiternZeitschrift für Naturforschung A, 1955